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MRF6P24190HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed primarily for large-signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
?
Typical CW Performance at 2450 MHz, VDD
= 28 Volts, I
DQ
= 1900 mA,
Pout
= 190 Watts
Power Gain ? 13.2 dB
Drain Efficiency ? 46.2%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
CW Operation @ TC
= 25
°C
Derate above 25°C
CW
250
1.3
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
RθJC
0.22
0.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P24190H
Rev. 3, 2/2009
Freescale Semiconductor
Technical Data
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
?
Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
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